474 citations · 4.1k across the 34 of their papers we have counts for
34 papers
Optical detection of the electron spin resonances of G centers in silicon
Félix Cache, Krithika V. R., Tobias Herzig +8
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…
Oxygen in diamond: thermal stability of ST1 spin centres and creation of oxygen-pair complexes
Paul Neugebauer, Xinxi Huang, Chloe Newsom +11
Little is known about oxygen-related defects in diamond. Recently, the promising room-temperature spin centre named ST1 was identified as an oxygen centre, but of still unknown ato…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Strain engineering of the electronic states of silicon-based quantum emitters
A. Ristori, N. Granchi, F. Intonti +13
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom waveleng…
Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J. -B. Jager, V. Calvo +13
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling betwee…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…
Weak electron irradiation suppresses the anomalous magnetization of N-doped diamond crystals
Annette Setzer, Pablo D. Esquinazi, Olesya Daikos +9
Several diamond bulk crystals with a concentration of electrically neutral single substitutional nitrogen atoms of ppm, the so-called C- or P1-centres, were irradiate…
Detection of single W-centers in silicon
Yoann Baron, Alrik Durand, Péter Udvarhelyi +13
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts…
Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization
Emilio Corte, Selene Sachero, Sviatoslav Ditalia Tchernij +9
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and anneal…
Spectral features of Pb-related color centers in diamond
Sviatoslav Ditalia Tchernij, Emilio Corte, Tobias Lühmann +9
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emi…
Determining the position of a single spin relative to a metallic nanowire
J. F. da Silva Barbosa, M. Lee, P. Campagne-Ibarcq +9
The nanoscale localization of individual paramagnetic defects near an electrical circuit is an important step for realizing hybrid quantum devices with strong spin-microwave photon…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
Fluorine-based color centers in diamond
S. Ditalia Tchernij, T. Lühmann, E. Corte +14
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
Photoluminescence of lead-related optical centers in single-crystal diamond
S. Ditalia Tchernij, T. Lühmann, J. Forneris +13
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photolumin…
Single-photon-emitting optical centers in diamond fabricated upon Sn implantation
S. Ditalia Tchernij, T. Herzig, J. Forneris +11
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission pea…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…
Sub-millihertz magnetic spectroscopy with a nanoscale quantum sensor
Simon Schmitt, Tuvia Gefen, Felix M. Stürner +13
Precise timekeeping is critical to metrology, forming the basis by which standards of time, length and fundamental constants are determined. Stable clocks are particularly valuable…
Wide bandwidth instantaneous RF spectrum analyzer based on nitrogen vacancy centers in diamond
M. Chipaux, L. Toraille, C. Larat +4
We propose an original analog method to perform instantaneous and quantitative spectral analysis of microwave signals. An ensemble of nitrogen-vacancy (NV) centers held in a diamon…
Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond
Janine Riedrich-Möller, Sébastien Pezzagna, Jan Meijer +5
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, sing…
Temperature dependent creation of nitrogen-vacancy centers in CVD diamond layers
A. Tallaire, M. Lesik, V. Jacques +8
In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a co…
Magnetic imaging with an ensemble of Nitrogen Vacancy centers in diamond
M. Chipaux, A. Tallaire, J. Achard +5
The nitrogen-vacancy (NV) color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. A…
Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond
Y. Romach, C. Muller, T. Unden +11
We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analy…