A silicon-integrated telecom photon-spin interface

Abstract

Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in ${}^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $\mu$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.

5 pages, 3 figures

References in corpus (13)

• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Observation of an environmentally insensitive solid state spin defect in diamond
• Optical quantum nondemolition measurement of a solid-state spin without a cycling transition
• High-fidelity entanglement between a trapped ion and a telecom photon via quantum frequency conversion
• Optical addressing of an individual erbium ion in silicon
• Optical properties of an ensemble of G-centers in silicon
• All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors
• Highly enriched ${}^{28}$Si reveals remarkable optical linewidths and fine structure for well-known damage centers
• Telecom-band quantum optics with ytterbium atoms and silicon nanophotonics
• Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
• Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
• Characterization of the Si:Se+ spin-photon interface
• Microring resonator-coupled photoluminescence from silicon W~centers

Cited by in corpus (49)

• Quantum repeaters: From quantum networks to the quantum internet
• Towards real-world quantum networks: a review
• Broad diversity of near-infrared single-photon emitters in silicon
• Cavity-enhanced quantum network nodes
• Constant-overhead quantum error correction with thin planar connectivity
• Ideal refocusing of an optically active spin qubit under strong hyperfine interactions
• Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
• Erbium dopants in silicon nanophotonic waveguides
• Narrow optical transitions in erbium-implanted silicon waveguides
• Cavity-coupled telecom atomic source in silicon
• Optical Charge Injection and Full Coherent Control of Spin-Qubit in the Telecom C-band Emitting Quantum Dot
• Cavity enhanced emission from a silicon T center
• Waveguide-integrated silicon T centres
• Bias-tailored quantum LDPC codes
• Quantifying nonlocality: how outperforming local quantum codes is expensive
• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• High-efficiency single photon emission from a silicon T-center in a nanobeam
• Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
• Rational Design of Efficient Defect-Based Quantum Emitters
• Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
• Coherent microwave, optical, and mechanical quantum control of spin qubits in diamond
• High finesse microcavities in the optical telecom O-band
• Deterministic Generation of Multipartite Entanglement via Causal Activation in the Quantum Internet
• Transition metal impurities in Silicon: Computational search for a semiconductor qubit
• Acceptor-induced bulk dielectric loss in superconducting circuits on silicon
• Electrically-triggered spin-photon devices in silicon
• Spin echo from erbium implanted silicon
• Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon
• Nuclear Spin Engineering for Quantum Information Science
• Entanglement of a nuclear spin qubit register in silicon photonics
• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Remote Quantum Networks based on Quantum Memories
• Novel characterisation of dopant-based qubits
• A CN complex as an alternative to the T center in Si
• Strain effects in phosphorous bound exciton transitions in silicon
• Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of Defects
• Many-Body Entanglement in Solid-State Emitters
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Silicon T centre hyperfine structure and memory protection schemes
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes
• Spin-photon Qubits for Scalable Quantum Network
• Magnetic Ni-N-Ni Centers in N-substituted NiO