activity
20102026
most citedA silicon-integrated telecom photon-spin interface

137 citations · 381 across the 12 of their papers we have counts for

collaborators

12 papers

quant-ph2026

Optically Resolved Excited State Hyperfine Structure of a Silicon Colour Centre in the Telecom Bands

Austin Woolverton, Nicholas Brunelle, Mehdi Keshavarz +8

Nuclear spin qubits in silicon offer exceptionally coherent quantum memory, and optically-interfaced spins are a promising platform for both quantum networking and distributed quan…

quant-ph2026

Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS

Cameron Jones, Jonathan Y. Huang, Santiago Serrano +13

Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely a…

quant-ph2025★ 2 cited

Silicon T centre hyperfine structure and memory protection schemes

Nicholas Brunelle, Joshua Kanaganayagam, Mehdi Keshavarz +11

Combining the long-coherence of spin qubits and the capability to transmit information and entanglement through photons, spin-photon interfaces (SPIs) are a promising platform for…

quant-ph2025★ 1 cited

Mid-circuit logic executed in the qubit layer of a quantum processor

Cameron Jones, Piper Wysocki, MengKe Feng +16

Practical quantum computers need to continuously exchange data between classical and quantum subsystems during a computation. Mid-circuit measurements of a qubits state are transfe…

quant-ph2025

Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Centre

Moein Kazemi, Mehdi Keshavarz, Mark E. Turiansky +5

Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T centre, a telecommunications…

physics.app-ph2024

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Jan Tröger, Reinhard Kersting, Birgit Hagenhoff +5

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructu…

cond-mat.mes-hall2024★ 13 cited

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Jan Klos, Jan Tröger, Jens Keutgen +10

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…

cond-mat.mes-hall2023★ 8 cited

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Jesus D. Cifuentes, Tuomo Tanttu, Paul Steinacker +20

Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of…

quant-ph2022★ 42 cited

Waveguide-integrated silicon T centres

A. DeAbreu, C. Bowness, A. Alizadeh +13

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and…

physics.app-ph2020★ 137 cited

A silicon-integrated telecom photon-spin interface

L. Bergeron, C. Chartrand, A. T. K. Kurkjian +7

Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matt…

cond-mat.mes-hall2018★ 72 cited

Engineering long spin coherence times of spin-orbit systems

T. Kobayashi, J. Salfi, J. van der Heijden +12

Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photo…

cond-mat.mtrl-sci2010★ 106 cited

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Richard E. George, Wayne Witzel, H. Riemann +4

Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and…