activity
20182026
most citedPurcell enhancement of silicon W centers in circular Bragg grating cavities

19 citations · 42 across the 6 of their papers we have counts for

collaborators

7 papers

quant-ph2026

Optical detection of the electron spin resonances of G centers in silicon

Félix Cache, Krithika V. R., Tobias Herzig +8

Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…

quant-ph2025

A single optically detectable tumbling spin in silicon

Félix Cache, Yoann Baron, Baptiste Lefaucher +9

We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystallin…

cond-mat.mtrl-sci2025

Room temperature magnetic vortices in the van der Waals magnet FeGeTe

Elias Sfeir, Carolin Schrader, Florentin Fabre +8

We investigate the effect of confinement on the magnetic state of a 12 nm-thick FeGeTe layer grown by molecular beam epitaxy. We use quantitative scanning NV magnetometry t…

quant-ph2024★ 7 cited

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Alrik Durand, Yoann Baron, Péter Udvarhelyi +15

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…

quant-ph2024★ 16 cited

Genuine and faux single G centers in carbon-implanted silicon

Alrik Durand, Yoann Baron, Félix Cache +12

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…

physics.optics2023★ 19 cited

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Baptiste Lefaucher, Jean-Baptiste Jager, Vincent Calvo +11

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artifici…

cond-mat.mtrl-sci2018

Optimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature

S. Chouaieb, L. J. Martínez, W. Akhtar +6

Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (11…