131 citations · 173 across the 6 of their papers we have counts for
6 papers
Optical detection of the electron spin resonances of G centers in silicon
Félix Cache, Krithika V. R., Tobias Herzig +8
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Purcell enhancement of silicon W centers in circular Bragg grating cavities
Baptiste Lefaucher, Jean-Baptiste Jager, Vincent Calvo +11
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artifici…
Decoherence of V spin defects in monoisotopic hexagonal boron nitride
A. Haykal, R. Tanos, N. Minotto +11
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isoto…
Quantum frequency conversion to telecom of single photons from a nitrogen-vacancy center in diamond
Anaïs Dréau, Anna Tchebotareva, Aboubakr El Mahdaoui +2
We report on the conversion to telecom wavelength of single photons emitted by a nitrogen-vacancy (NV) defect in diamond. By means of difference frequency generation, we convert sp…