131 citations · 173 across the 6 of their papers we have counts for
4 papers · 1 filter
Optical detection of the electron spin resonances of G centers in silicon
Félix Cache, Krithika V. R., Tobias Herzig +8
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Quantum frequency conversion to telecom of single photons from a nitrogen-vacancy center in diamond
Anaïs Dréau, Anna Tchebotareva, Aboubakr El Mahdaoui +2
We report on the conversion to telecom wavelength of single photons emitted by a nitrogen-vacancy (NV) defect in diamond. By means of difference frequency generation, we convert sp…