19 citations · 56 across the 14 of their papers we have counts for
5 papers · 1 filter
Optical detection of the electron spin resonances of G centers in silicon
Félix Cache, Krithika V. R., Tobias Herzig +8
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…
A single optically detectable tumbling spin in silicon
Félix Cache, Yoann Baron, Baptiste Lefaucher +9
We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystallin…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P. Udvarhelyi, T. Clua-Provost, A. Durand +6
The boron-vacancy spin defect () in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly p…