Cubic BN optical gap and intragap optically active defects
arXiv:1806.11446 · doi:10.1103/PhysRevB.98.094106
Abstract
We report a comprehensive study on the optical properties of cubic boron nitride (c-BN) and its optically active defects. Using electron energy-loss spectroscopy (EELS) within a monochromated scanning transmission electron microscope (STEM) on the highest-quality crystals available, we demonstrate unequivocally that the optical-gap energy of c-BN slightly exceeds 10 eV. Further theoretical analysis in the framework of the Bethe-Salpeter equation of many-body perturbation theory supports this result. The spatial localization of defect-related emissions has been investigated using nanometric resolved cathodoluminescence (nano-CL) in a STEM. By high-temperature annealing a c-BN powder, we have promoted phase transitions in nanometric domains which have been detected by the appearance of specific hexagonal-phase signatures in both EELS and CL spectra. A high number of intragap optically active centers are known in c-BN, but the literature is rather scattered and hence has been summarized here. For several emission lines we have obtained nano-CL maps which show emission spot sizes as small as few tens of nanometers. Finally, by coupling nano-CL to a Hanbury-Brown-Twiss intensity interferometer, we have addressed individual spots in order to identify the possible presence of single-photon sources. The observed CL bunching effect is compatible with a limited set of single-photon emitters and it permits obtaining emission lifetimes of the order of the nanosecond.
References in corpus (23)
- Hexagonal boron nitride is an indirect bandgap semiconductor
- Quasiparticle Self-Consistent GW Theory
- Ab initio calculation of excitonic effects in the optical spectra of semiconductors
- All-electron self-consistent GW approximation: Application to Si, MnO, and NiO
- Huge excitonic effects in layered hexagonal boron nitride
- Excitons in boron nitride nanotubes: dimensionality effects
- Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
- Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
- Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride
- Efficient implementation of the GW approximation within the all-electron FLAPW method
- Quasiparticle GW calculations for solids, molecules and 2D materials
- Efficient single photon emission from a high-purity hexagonal boron nitride crystal
- Predictive GW calculations using plane waves and pseudopotentials
- Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
- Spatially resolved quantum nano-optics of single photons using an electron microscope
- Excitons and stacking order in h-BN
- Accurate all-electron quasiparticle energies employing the full-potential augmented planewave method
- Optical Properties of BN in the cubic and in the layered hexagonal phases
- Automation methodologies and large-scale validation for , towards high-throughput calculations
- Vibrational surface EELS probes confined Fuchs-Kliewer modes
- Exciton energy-momentum map of hexagonal boron nitride
- Colossal photon bunching in quasiparticle-mediated nanodiamond cathodoluminescence
- Photoluminescence from voids created by femtosecond laser pulses inside cubic-BN
Cited by in corpus (7)
- Universal polarization energies for defects in monolayer, surface and bulk hexagonal boron nitride : A finite-size fragments GW approach
- Superbunching in cathodoluminescence: a master equation approach
- Quantum Confined Luminescence in Two dimensions
- Pressure Dependence of Electronic, Vibrational and Optical Properties of wurtzite-Boron Nitride
- An atlas of photonic and plasmonic materials for cathodoluminescence microscopy
- Optical spin defect pairs in cubic boron nitride
- Phonon assisted light absorption and emission in cubic-Boron Nitride