Universal polarization energies for defects in monolayer, surface and bulk hexagonal boron nitride : A finite-size fragments GW approach
arXiv:2204.11671 · doi:10.1103/PhysRevMaterials.6.064008
Abstract
We study defect energy levels in hexagonal boron-nitride with varying number of layers using a fragment many-body formalism, taking as examples the paradigmatic carbon-dimer and defects. We show that a single layer can be fragmented in polarizable finite-size areas reproducing faithfully the effect of the dielectric environment, dramatically facilitating the study at the many-body level of point defects in the dilute limit. The evolution of defect energy levels from the monolayer to a -layer system due to increased screening, labeled polarization energies, follow a simple behavior. The coefficients and are found to be close-to-universal, with opposite signs for holes and electrons, characterizing mainly the host and the position of the defect (surface or bulk), but hardly the defect type. Our results rationalize the evolution of defect energy levels with layers number, allowing to safely extrapolate results obtained for the monolayer to few-layers, surface or bulk \textit{h}-BN. The present many-body fragment approach further opens the door to studying disordered 2D layers.
Published in Phys. Rev. Materials 6, 064008 (2022)
References in corpus (16)
- Renormalization of Molecular Electronic Levels at Metal-Molecule Interfaces
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- The GW compendium: A practical guide to theoretical photoemission spectroscopy
- Defect-related photoluminescence of hexagonal boron nitride
- Fluctuation-induced quantum friction in nanoscale water flows
- Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial
- Coupling of excitons and defect states in boron-nitride nanostructures
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
- Optoelectronic Properties and Excitons in Hybridized Boron Nitride and Graphene Hexagonal Monolayers
- Towards identification of paramagnetic substitutional carbon defects in hexagonal boron nitride acting as quantum bits
- Cubic-scaling all-electron GW calculations with a separable density-fitting space-time approach
- First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies
- Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)
- Photoluminescent properties of the carbon-dimer defect in hexagonal boron-nitride: a many-body finite-size cluster approach
- Diffusion quantum Monte Carlo and GW study of the electronic properties of monolayer and bulk hexagonal boron nitride
- Phonon-assisted luminescence in defect centers from many-body perturbation theory
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