Optical detection of strain and doping inhomogenieties in single layer MoS2

Abstract

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge concentration, conformational ripples and residual mechanical strain. In this work, we employed spatially resolved Raman and Photoluminescence images to investigate strain and doping inhomogeneities in a single layer exfoliated Molybdenum disulphide crystal. We have found that correlations between the spectral parameters of the most prominent Raman bands A1' and E' enable us to decouple and quantify strain and charge doping effects. In comparison with AFM topography, we show that the spatial distribution of the linewidth of the A-exciton peak is strain sensitive and can capture features smaller than the laser spot size. The presented optical analysis may have implications in the development of high-quality devices based on two-dimensional materials since structural and electronic modifications affect considerably their carrier mobility and conductivity.

12 pages, 3 figures

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• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
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• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
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• Phonon anharmonicities in graphite and graphene
• Optical detection of strain and doping inhomogenieties in single layer MoS2
• The deformation of wrinkled graphene
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Cited by in corpus (24)

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• Uncovering the Effects of Metal Contacts on Monolayer MoS2
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• Spectroscopic Evaluation of Charge-transfer Doping and Strain in Graphene/MoS2 Heterostructures
• Strain Engineering 2D MoS${}_2$ with Thin Film Stress Capping Layers
• Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation
• Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
• Sub-60 mV/decade switching with a cold metal as the injection source
• CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
• Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy
• WS2 Monolayers Coupled to Hyperbolic Metamaterial Nanoantennas: Broad Implications for Light-Matter-Interaction Applications
• Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation
• Moiré Engineering in 2D Heterostructures with Process-Induced Strain
• Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures
• Atomic resolution interface structure and vertical current injection in highly uniform $Mo{S}_2$ heterojunctions with bulk GaN
• Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
• Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture
• Intra-Domain Periodic Defects in Monolayer MoS${}_2$
• Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
• Direct observation of strain-induced orbital valence band splitting in HfSe${}_2$ by sodium intercalation
• Electrically pumped h-BN single-photon emission in van der Waals heterostructure
• Universal wrinkling of freestanding atomically thin films
• Strain- and potential-controlled tunneling in monolayer MoS${}_2$