Spectroscopic Evaluation of Charge-transfer Doping and Strain in Graphene/MoS2 Heterostructures
arXiv:1905.00664 · doi:10.1103/PhysRevB.99.195401
Abstract
It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer doping across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructures prepared by mechanical exfoliation and layer-by-layer transfer. By using correlation analysis between the Raman modes of graphene and MoS2 we show that both layers are subjected to compressive strain and charge transfer doping following mechanical exfoliation and thermal annealing. Furthermore, we show that both strain and carrier concentration can be modulated in the heterostructures with additional thermal annealing. Our study highlights the importance of considering both mechanical and electronic coupling when characterizing the interface in van der Waals heterostructures, and demonstrates a method to tune their electromechanical properties.
arXiv comment5 Figures, 1 table
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Cited by in corpus (8)
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- Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
- Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture
- Multidimensional Analysis of Excitonic Spectra of Monolayers of Tungsten Disulphide: Towards Computer Aided Identification of Structural and Environmental Perturbations of 2D Materials
- Stress effects on vibrational spectra of a cubic hybrid perovskite: A probe of local strain
- Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous In-plane Strain
- Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides