Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
arXiv:2303.15881 · doi:10.1039/D3NR01687K
Abstract
Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two dimensional semiconductor, as molybdenum disulfide, by employing different growth substrate with peculiar thermal properties. In this work we demonstrate that the built-in strain of MoS2 monolayers, grown on SiO2/Si substrate using liquid precursors chemical vapor deposition, is mainly dominated by the size of the monolayer. In fact, we identify a critical size equal to 20 um, from which the built-in strain increases drastically. The built-in strain is maximized for 60 um sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman modes separation becomes unreliable for monolayer with a lateral size above 20 um.
References in corpus (29)
- Atomically thin MoS2: A new direct-gap semiconductor
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Local strain engineering in atomically thin MoS2
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
- Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
- Engineering symmetry breaking in two-dimensional layered materials
- Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2
- Optical detection of strain and doping inhomogenieties in single layer MoS2
- Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
- Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
- Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS
- Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS, WSe and WTe
- Variation of the fundamental band gap nature in curved two-dimensional WS2
- Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
- Spectroscopic Evaluation of Charge-transfer Doping and Strain in Graphene/MoS2 Heterostructures
- Strain control of hybridization between dark and localized excitons in a 2D semiconductor
- Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation
- Investigation of Growth-Induced Strain in Monolayer MoS2 Grown by Chemical Vapor Deposition
- The edge delamination of monolayer transition metal dichalcogenides
- Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture
- Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure