Variation of the fundamental band gap nature in curved two-dimensional WS2

Abstract

We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of one-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially- and time-resolved micro-photoluminescence revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.

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• Electron-Phonon Coupling, Thermal Expansion Coefficient, Resonance Effect and Phonon Dynamics in High Quality CVD Grown Mono and Bilayer MoSe2
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• Spatiotemporal dynamics of free and bound excitons in CVD-grown MoS${}_2$ monolayer
• Strain Engineering in Monolayer WS2 and WS2 Nanocomposites
• Extremely high excitonic $g$-factors in 2D crystals by alloy-induced admixing of band states
• Exchange-Correlation Functionals in 2D Materials: Applications, Challenges, and Limitations
• Uniaxial Strain-Induced Electronic Properties Alteration of MoS${}_2$ Monolayer
• Radial Rashba spin-orbit fields in commensurate twisted transition-metal dichalcogenide bilayers