Anomalous Lattice Vibrations of Single and Few-Layer MoS2
arXiv:1005.2509 · doi:10.1021/nn1003937
Abstract
Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime.
14 pages, 4 figures
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- Absorbance Enhancement of Monolayer MoS in a Perfect Absorbing System
- One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor
- Uni-Traveling-Carrier Photodiode Based on MoS2/GaN van der Waals Heterojunction for High-Speed Visible-Light Detection
- Contrast inversion in neutral atom microscopy using atomic cluster beams
- Direct transformation of crystalline MoO into few-layers MoS
- Doping effects on charge density instability in non-centrosymmetric PbxTaSe2
- Effects of Reduced Interlayer Interactions on the K-point Excitons of MoS Nanoscrolls
- Exfoliation and Optical Properties of S=1 Triangular Lattice Antiferromagnet NiGaS
- Slippery Polymer Monoliths: Surface Functionalization with Ordered MoS2 Microparticle Arrays
- Optically tunable spin Hall effect in periodically driven monolayer transition metal dichalcogenides
- Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
- Impact of a monolayer on the nanoscale thermoelastic response of silicon heterostructures
- Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter
- Strained 2D TMD lateral heterojunctions via grayscale thermal-Scanning Probe Lithography
- Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
- Investigating the Ferroelectric Potential Landscape of 3R-MoS through Optical Measurements
- Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging
- Optical microscope based universal parameter for identifying layer number in two-dimensional materials
- Tuning Bandgap and Energy Stability of Organic-Inorganic Halide Perovskites through Surface Engineering
- Magnetic field tuning of modulated magnetic orders in CrOCl at the two-dimensional limit
- Revealing the nanogeometry of WS2 nanoflowers by polarization-resolved Raman spectroscopy
- Phonon Renormalization in Reconstructed MoS Moiré Superlattices
- Electronic Raman scattering from 2D metals with broken inversion symmetry
- Tunable phononic coupling in excitonic quantum emitters