Defect-Moderated Oxidative Etching of MoS2
arXiv:1906.04850 · doi:10.1063/1.5115036
Abstract
We report a simple technique for the selective etching of bilayer and monolayer MoS. In this work, chosen regions of MoS were activated for oxygen adsorption and reaction by the application of low doses of He at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS can be etched very efficiently and with high region specificity by heating in air.
arXiv comment8 pages, 6 figures
References in corpus (14)
- Atomically thin MoS2: A new direct-gap semiconductor
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2
- An innovative way of etching MoS2: Characterization and mechanistic investigation
- Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS
- A Comprehensive Multiphonon Spectral Analysis in MoS2
- Robust valley polarization of helium ion modified atomically thin MoS
- Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials
- Fermi surface of MoO2 studied by angle-resolved photoemission spectroscopy, de Haas-van Alphen measurements, and electronic structure calculations
- Photoresponsivity enhancement in monolayer MoS by rapid O:Ar plasma treatment
- Suppression of the Shear Raman Mode in Defective Bilayer MoS2