Defect-Moderated Oxidative Etching of MoS2

Pierce Maguire; Jakub Jadwiszczak; Maria O'Brien; Darragh Keane; Georg S. Duesberg; Niall McEvoy; Hongzhou Zhang

doi:10.1063/1.5115036

paper

Defect-Moderated Oxidative Etching of MoS2

arXiv:1906.04850 · doi:10.1063/1.5115036

Abstract

We report a simple technique for the selective etching of bilayer and monolayer MoS $_{2}$ . In this work, chosen regions of MoS $_{2}$ were activated for oxygen adsorption and reaction by the application of low doses of He $^{+}$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS $_{2}$ can be etched very efficiently and with high region specificity by heating in air.

8 pages, 6 figures