Suppression of the Shear Raman Mode in Defective Bilayer MoS2
arXiv:1812.05543 · doi:10.1063/1.5086366
Abstract
We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by transmission electron microscopy. With increasing ion dose the shear mode is observed to redshift and it is also suppressed sharply compared to other Raman peaks. We use the linear chain model to describe the changes to the Raman spectra. Our observations suggest that crystallite size and orientation are the dominant factors behind the changes to the Raman spectra.
arXiv comment5 pages, 4 figures in main paper + supplemental
References in corpus (20)
- 2D materials and van der Waals heterostructures
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Mixed-Dimensional van der Waals Heterostructures
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- The Shear Mode of Multi-Layer Graphene
- Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2
- Laser-thinning of MoS2: on demand generation of a single-layer semiconductor
- Shear and Layer Breathing Modes in Multilayer MoS2
- Photoluminescence of freestanding single- and few-layer MoS2
- Observation of interlayer phonon modes in van der Waals heterostructures
- Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals
- Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects
- Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2
- Anharmonic phonons in few layer MoS: Raman spectroscopy of ultra low energy compression and shear modes
- On-Stack Two-Dimensional Conversion of MoS2 into MoO3
- Robust valley polarization of helium ion modified atomically thin MoS
- High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
- Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials
- Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials