most citedPhotoresponsivity enhancement in monolayer MoS by rapid O:Ar plasma treatment

23 citations · 33 across the 3 of their papers we have counts for

collaborators

5 papers

physics.app-ph2019

XeF-Enhanced Focused Ion Beam Etching and Passivation of GaSb

Pierce Maguire, Darragh Keane, Brian Kelly +2

Focused ion beams (FIBs) are widely used to modify optoelectronic devices, but their utility is severely restricted in some III-V materials due to adverse effects such as nanofibre…

cond-mat.mtrl-sci2019

Defect-Moderated Oxidative Etching of MoS2

Pierce Maguire, Jakub Jadwiszczak, Maria O'Brien +4

We report a simple technique for the selective etching of bilayer and monolayer MoS. In this work, chosen regions of MoS were activated for oxygen adsorption and reaction b…

physics.app-ph201823 cited

Photoresponsivity enhancement in monolayer MoS by rapid O:Ar plasma treatment

Jakub Jadwiszczak, Gen Li, Conor P. Cullen +5

We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS by treatment with O:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS by…

cond-mat.mtrl-sci201810 cited

Suppression of the Shear Raman Mode in Defective Bilayer MoS2

Pierce Maguire, Clive Downing, Jakub Jadwiszczak +7

We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 ke…

cond-mat.mtrl-sci2018

Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation

Jakub Jadwiszczak, Darragh Keane, Pierce Maguire +12

Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the co…