Photoresponsivity enhancement in monolayer MoS by rapid O:Ar plasma treatment
arXiv:1812.09517 · doi:10.1063/1.5086726
Abstract
We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS by treatment with O:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS by TEM, Raman and PL mapping and discuss the role of MoO in improving the photocurrent generation in our devices. At the highest tested laser power of 0.1 mW, we find ten-fold enhancements to both the output current and carrier field-effect mobility under the illumination wavelength of 488 nm. We suggest that the improvement of electrical performance is due to the surface presence of MoO resulting from the chemical conversion of MoS by the oxygen-containing plasma. Our results highlight the beneficial role of plasma treatment as a fast and convenient way of improving the properties of synthetic 2D MoS devices for future consideration in optoelectronics research.
arXiv comment6 pages, 5 figures
References in corpus (12)
- Atomically thin MoS2: A new direct-gap semiconductor
- Single-Layer MoS2 Phototransistors
- Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics
- Mechanisms of photoconductivity in atomically thin MoS2
- Picosecond photoresponse in van der Waals heterostructures
- Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma
- Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
- Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors
- Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenide
- Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS
- On-Stack Two-Dimensional Conversion of MoS2 into MoO3
- Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors