Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma

Abstract

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.

arXiv comment14 pages, 10 figures

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Cited by in corpus (14)

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• NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2
• Optical signatures of states bound to vacancy defects in monolayer MoS${}_2$
• Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials
• Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment
• Photoresponsivity enhancement in monolayer MoS${}_2$ by rapid O${}_2$:Ar plasma treatment
• Contact Resistance Optimization in MoS${}_2$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
• Optical absorption in disordered monolayer molybdenum disulfide
• Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures
• Non-degenerate valleys in the half-metallic ferromagnet Fe/WS${}_2$
• Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations
• Transition Metal Dichalcogenide MoS${}_2$: oxygen and fluorine functionalization for selective plasma processing