Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Abstract

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

Review article, 10 figures. ACS Nano, 2014, Article ASAP

References in corpus (26)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Valley polarization in MoS2 monolayers by optical pumping
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
• Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Channel Length Scaling of MoS2 MOSFETs
• Laser-thinning of MoS2: on demand generation of a single-layer semiconductor
• Large and tunable photo-thermoelectric effect in single-layer MoS2
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Valley susceptibility of an interacting two-dimensional electron system
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2
• Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

Cited by in corpus (238)

• Mixed-Dimensional van der Waals Heterostructures
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Photovoltaic effect in an electrically tunable van der Waals heterojunction
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry
• Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus
• Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
• A black phosphorus photo-detector for multispectral, high-resolution imaging
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
• Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals
• Indirect-to-direct band-gap crossover in few-layer MoTe${}_2$
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Direct Observation of Valley-polarized Topological Edge States in Designer Surface Plasmon Crystals
• Intrinsic electron mobility exceeding 1000 cm${}^2$/Vs in multilayer InSe FETs
• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
• Novel effects of strains in graphene and other two dimensional materials
• Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS${}_2$
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
• Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2
• Electronic Transport in Two-Dimensional Materials
• Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Atomically thin p-n junctions based on two-dimensional materials
• Excitons in van der Waals heterostructures: The important role of dielectric screening
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• Many-Body Theory of Trion Absorption Features in Two-Dimensional Semiconductors
• Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
• Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials
• The role of contact resistance in graphene field-effect devices
• Electronic properties of single-layer and multilayer transition metal dichalcogenides $M{X}_2$ ($M=$ Mo, W and $X=$ S, Se)
• Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma
• Structural and Electrical Properties of MoTe${}_2$ and MoSe${}_2$ Grown by Molecular Beam Epitaxy
• Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene MoS2 van der Waals Heterojunction
• High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures
• Interlayer excitons and Band Alignment in MoS${}_2$/hBN/WSe${}_2$ van der Waals Heterostructures
• Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
• Low-loss composite photonic platform based on 2D semiconductor monolayers
• Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $Mo{S}_2$ by Amorphous $Ti{O}_x$ Encapsulation
• Exciton Dynamics in Monolayer Transition Metal Dichalcogenides
• Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
• Layer thickness-dependent phonon properties and thermal conductivity of MoS2
• Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides
• Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics
• First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
• Breakdown of optical phonons' splitting in two-dimensional materials
• Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
• Exploring Phononic Properties of Two-Dimensional Materials using Machine Learning Interatomic Potentials
• Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy
• Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS${}_2$
• A WSe2 vertical field emission transistor
• Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
• Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
• Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
• Binding energies and spatial structures of small carrier complexes in monolayer transition metal dichalcogenides via diffusion Monte Carlo
• Nanomaterials for Quantum Information Science and Engineering
• Collapse of layer dimerization in the photo-induced hidden state of 1T-TaS2
• Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
• Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2
• WS2-graphite dual-ion battery
• Ultrasensitive and highly accurate long-range surface plasmon resonance biosensors based on two-dimensional transition metal dichalcogenides
• Emergence of one-dimensional wires of free carriers in transition-metal-dichalcogenide nanostructures
• Materials properties of out-of-plane heterostructures of MoS${}_2$-WSe${}_2$ and WS${}_2$-MoSe${}_2$
• Graphene-Based Platform for Infrared Near-Field Nanospectroscopy of Water and Biological Materials in an Aqueous Environment
• Low-Frequency Electronic Noise in Exfoliated Quasi-1D TaSe3 van Der Waals Nanowires
• Novel doping alternatives for single-layer transition metal dichalcogenides
• Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2
• Dark excitons and the elusive valley polarization in transition metal dichalcogenides
• Band renormalization of blue phosphorus on Au(111)
• Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
• Self-Aligned van der Waals Heterojunction Diodes and Transistors
• Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS2 van der Waals Heterojunction
• Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
• In Pursuit of 2D Materials for Maximum Optical Response
• Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS${}_2$
• Theoretical and experimental investigation of vacancy-based doping of monolayer MoS${}_2$ on oxide
• High yield synthesis and liquid exfoliation of two-dimensional belt like hafnium disulphide
• Role of Charge Traps in the Performance of Atomically-Thin Transistors
• Field Emission Characterization of MoS2 Nanoflowers
• Anisotropic mechanical properties and strain tuneable band-gap in single-layer SiP, SiAs, GeP and GeAs
• Observation of bosonic condensation in a hybrid monolayer MoSe2-GaAs microcavity
• Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2
• Femtosecond valley polarization and topological resonances in transition metal dichalcogenides
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• New Families of Large Band Gap 2D Topological Insulators in Ethynyl-Derivative Functionalized Compounds
• Photoluminescence from Single-Walled MoS${}_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes
• As2S3, As2Se3 and As2Te3 nanosheets: Superstretchable semiconductors with anisotropic carrier mobilities and optical properties
• Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach
• Phonon Bandgap Engineering of Strained Monolayer MoS2
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• Exciton-polarons in doped semiconductors in a strong magnetic field
• Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase
• Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
• Semimetal Contacts to Monolayer Semiconductor: Weak Metalization as an Effective Mechanism to Schottky Barrier Lowering
• Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T' and 1T'/2H heterostructure
• Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals
• Inverse Funnel Effect of Excitons in Strained Black Phosphorus
• Superconductivity in the metastable 1T' and 1T''' phases of MoS${}_2$ crystals
• Stability of charged sulfur vacancies in 2D and bulk MoS${}_2$ from plane-wave density functional theory with electrostatic corrections
• NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase
• Spatially Resolved Electronic Properties of Single-Layer WS${}_2$ on Transition Metal Oxides
• Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides
• Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
• Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization
• Mechanistic Insight to the Chemical Treatments of Monolayer Transition Metal Disulfides for Photoluminescence Enhancement
• Hybrid k$\cdot$p tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS${}_2$, MoSe${}_2$, WS${}_2$ and WSe${}_2$
• Auger recombination of dark excitons in $\mathrm{W}{\mathrm{S}}_2$ and $\mathrm{WS}{\mathrm{e}}_2$ monolayers
• Interlayer Coupling in Two-Dimensional Semiconductor Materials
• Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David
• Time-domain observation of interlayer exciton formation and thermalization in a MoSe${}_2$/WSe${}_2$ heterostructure
• Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
• Energy dissipation in van der Waals two-dimensional devices
• Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene
• Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS${}_2$
• Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene
• Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles
• Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe${}_2$
• Emergent gauge fields from curvature in single layers of transition-metal dichalcogenides
• Engineered Defects to Modulate Fracture Strength of Single Layer MoS2: An Atomistic Study
• Experimental Progress on Layered Topological Semimetals
• Vibrational and dielectric properties of the bulk transition metal dichalcogenides
• Fast relaxation of photo-excited carriers in 2D transition metal dichalcogenides
• A Versatile Post-Doping Towards Two-Dimensional Semiconductors
• Laser-assisted Oxidation of Multi-layer Tungsten Diselenide Nanosheets
• The Enhanced Ferromagnetism of Single-Layer CrX3 (X=Br and I) by Van der Waals Engineering
• Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
• Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode
• Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer
• Control of interlayer delocalization in 2H transition metal dichalcogenides
• High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
• Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)1.16(TiSe2)m (m=1, 2)
• Surface phases of the transition-metal dichalcogenide IrTe2
• Growth kinetics and atomistic mechanisms of native oxidation of ZrS${}_x$Se${}_{2-x}$ and MoS${}_2$ crystals
• Electron-phonon scattering effects on electronic and optical properties of orthorhombic GeS
• Two dimensional transition metal dichalcogenide based bilayer heterojunctions for efficient solar cells and photocatalytic applications
• Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations
• Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
• Magnetic field dependence of electronic properties of MoS${}_2$ quantum dots with different edges
• Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
• Monolayer 2D semiconducting tellurides for high-mobility electronics
• Resonant quenching of Raman scattering due to out-of-plane A${}_{1g}$/A'${}_1$ modes in few-layer MoTe${}_2$
• Sub 20 meV Schottky barriers in metal/MoTe2 junctions
• Critical assessment of $G_0{W}_0$ calculations for 2D materials: the example of monolayer MoS${}_2$
• Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique
• Fully automated identification of 2D material samples
• Ferromagnetic nodal-line metal in monolayer {\em h}-InC
• Ultrafast exciton relaxation in monolayer transition metal dichalcogenides
• DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs
• Remarkably low-energy one-dimensional fault line defects in single-layered phosphorene
• Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
• Imaging microscopic electronic contrasts at the interface of single-layer WS${}_2$ with oxide and boron nitride substrates
• Visualizing band structure hybridization and superlattice effects in twisted MoS${}_2$/WS${}_2$ heterobilayers
• Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions
• Electronic Properties of Defective MoS${}_2$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach
• High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
• Range-Separated Hybrid Functionals for Mixed-Dimensional Heterojunctions: Application to Phthalocyanines/MoS2
• Effects of Two-Dimensional Material Thickness and Surrounding Dielectric Medium on Coulomb Interactions and Excitons
• Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
• The Atomic and Electronic structure of 0° and 60° grain boundaries in MoS2
• Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3
• Phonons in MoSe2/WSe2 van der Waals heterobilayer
• Dielectric screening at TMD:hBN interfaces: Monolayer-to-bulk transition, local-field effect, and spatial dependence
• Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
• External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure
• Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
• Temperature-dependent excitonic light manipulation with atomically-thin optical elements
• Emergence of topologically protected states in MoTe${}_2$ Weyl semimetal with layer stacking order
• On the Elastic Properties and Fracture Patterns of MoX2 (X = S, Se, Te) Membranes: A Reactive Molecular Dynamics Study
• Vibrational and dielectric properties of monolayer transition metal dichalcogenides
• Structural and Magnetic Characterization of Large Area, Free-Standing Thin Films of Magnetic Ion Intercalated Dichalcogenides Mn0.25TaS2 and Fe0.25TaS2
• Removal of spectral distortion due to echo for ultrashort pulses propagating through multilayer structures with thick substrate
• Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect
• Prediction of a Two-dimensional Sulfur Nitride (S3N2) Solid for Nanoscale Optoelectronic Applications
• Effect of long-range structural corrugations on magnetotransport properties of phosphorene in tilted magnetic field
• Prediction of Two-Dimensional Monochalcogenides: MoS and WS
• Carrier Injection and Scattering in Atomically Thin Chalcogenides
• Machine learning enables robust prediction of thermal boundary conductance of 2D substrate interfaces
• The dynamics of copper intercalated molybdenum ditelluride
• Phenomenological model for long wavelength optical modes in transition-metal dichalcogenide monolayer
• First-principles study of magnetism and electric field effects in 2D systems
• Prediction of low energy phase transition in metal doped MoTe${}_2$ from first principle calculations
• Polarization-resolved broadband time-resolved optical spectroscopy for complex materials: application to the case of MoTe${}_2$ polytypes
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• Superfluid flow of polaron polaritons above Landau's critical velocity
• PAW mediated ab initio simulations on linear response phonon dynamics of anisotropic black phosphorous monolayer for thermoelectric applications
• Reduced absorption due to defect-localized interlayer excitons in transition metal dichalcogenide-graphene heterostructures
• Effective Dynamics of 2D Bloch Electrons in External Fields Derived From Symmetry
• Effect of intravalley and intervalley electron-hole exchange on the nonlinear optical response of monolayer MoSe${}_2$
• Infrared study of the pressure-induced isostructural metallic transition in Mo${}_{0:5}$W${}_{0:5}$S${}_2$
• Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures
• Probing the structure and composition of van der Waals heterostructures using the nonlocality of Dirac plasmons in the terahertz regime
• Ultrashort Pulse Laser Annealing of Amorphous Atomic Layer Deposited MoS${}_2$ Films
• Valley-contrasting interband transitions and excitons in symmetrically biased dice model
• Spatiotemporal dynamics of free and bound excitons in CVD-grown MoS${}_2$ monolayer
• Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors
• Prediction of entropy stabilized incommensurate phases in the system MoS${}_2$-MoTe${}_2$
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
• Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes
• High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
• Strong Effects of Interlayer Interaction on Valence-Band Splitting in Transition Metal Dichalcogenides
• Dynamic screening of quasiparticles in WS${}_2$ monolayers
• Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform
• Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics
• Doping-induced non-Markovian interference causes excitonic linewidth broadening in monolayer WSe${}_2$
• A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor
• Rich diversity of crystallographic phase formation in 2D Rex:Mo1-xS2 (x< 0.5) alloy
• Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
• Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
• Femtosecond trimer quench cycled at megahertz rates in the unconventional charge-density wave material $1\text{T’}-{\text{TaTe}}_2$
• Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors
• Highly anisotropic thermoelectric properties of carbon sulfide monolayers
• Isolated highly localized bands in $\mathrm{Yb}{\mathrm{I}}_2$ monolayer caused by $4f$ orbitals
• Ultrafast strong-field absorption in gapped graphene
• Dimensional Crossover Tuned by Pressure in Layered Magnetic NiPS3
• Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells
• Microscopic Green's function approach for generalized Dirac Hamiltonians
• Pump-driven opto-magnetic properties in semiconducting transition-metal dichalcogenides: an analytical model
• Defect chemistry of Eu dopants in NaI scintillators studied by atomically resolved force microscopy
• Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS${}_2$
• Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2
• Nanomechanics of Antimonene Allotropes
• Predicting a Two-dimensional P2S3 Monolayer: A Global Minimum Structure
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• Reevaluating the electrical impact of atomic carbon impurities in MoS2
• Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation
• Formation of Near-IR Excitons in Low Dimensional CuSbS${}_2$
• The role of functional thiolated molecules on the enhanced electronic transport of interconnected MoS${}_2$ nanostructures
• Prediction of a Novel 2D Porous Boron Nitride Material with Excellent Electronic, Optical and Catalytic Properties
• Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact
• Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra
• Dipole-containing encapsulation on WSe2/MoS2 nanoflake p-n diode with glass substrate toward an ideal performance
• Synthesis and thermal stability of TMD thin films: A comprehensive XPS and Raman study
• Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers
• Charge Transport in Electronic Devices Printed with Inks of Quasi-1D van der Waals Materials
• Direct Visualisation of Out-of-Equilibrium Structural Transformations in Atomically-Thin Chalcogenides
• Deep learning-based quality filtering of mechanically exfoliated 2D crystals