Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Abstract

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to 1000 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.

References in corpus (10)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
• Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS${}_2$
• Low Frequency Electronic Noise in Single-Layer MoS2 Transistors
• Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
• Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices
• Trap-assisted space charge limited transport in short channel MoS2 transistor

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