Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene
arXiv:1604.00677 · doi:10.1021/acsnano.5b06398
Abstract
Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced bandgap of ~0.4 eV at the monolayer MoS2 edges.
References in corpus (19)
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Local strain engineering in atomically thin MoS2
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
- Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus
- Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
- Direct imaging of the band profile in single layer on graphite: quasiparticle energy gap, metallic edge states and edge band bending
- Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
- In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
- How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
- Grain Boundary Loops in Graphene
- Orientation Dependent Thermal Conductance in Single-Layer MoS2
- MoS2 Nanoparticles Grown on Graphene: An Advanced Catalyst for Hydrogen Evolution Reaction
- Growth of thin graphene layers on stacked SiC surface in ultra high vacuum
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- Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions
- Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
- Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide
- Substrate screening effects on the quasiparticle band gap and defect charge transition levels in MoS
- Superlubricity of epitaxial monolayer WS2 on graphene
- Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
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- Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene
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- Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T'-WSe2 Thin Film
- GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment
- Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer
- Comprehensive tunneling spectroscopy of quasi-freestanding MoS on graphene on Ir(111)
- Composite fabrics of conformal MoS2 grown on CNT fibers: tough battery anodes without metals or binders
- Exploring the stability of twisted van der Waals heterostructures
- Mono-elemental saturable absorber in mode-locked fiber laser: A review
- Dynamic Growth/Etching Model for the Synthesis of Two-Dimensional Transition Metal Dichalcogenides via Chemical Vapour Deposition
- Dielectric screening at TMD:hBN interfaces: Monolayer-to-bulk transition, local-field effect, and spatial dependence
- Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
- Reduced absorption due to defect-localized interlayer excitons in transition metal dichalcogenide-graphene heterostructures
- Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers
- Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer