Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Abstract

Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moiré pattern that replicates the Moiré pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

arXiv comment4 figures, 2 supplementary figures

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Cited by in corpus (11)

• Band gap measurements of monolayer h-BN and insights into carbon-related point defects
• Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO
• Interferences of electrostatic moiré potentials and bichromatic superlattices of electrons and excitons in transition metal dichalcogenides
• Coulomb-Engineered Heterojunctions and Dynamical Screening in Transition Metal Dichalcogenide Monolayers
• Non-invasive control of excitons in two-dimensional materials
• The true corrugation of a h-BN nanomesh layer
• Atomic-resolution structural and spectroscopic evidence for the synthetic realization of two-dimensional copper boride
• Photoluminescence efficiency of MBE-grown MoSe${}_2$ monolayers featuring sharp excitonic lines and diverse grain structures
• Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
• Efficient $GW$ band structure calculations using Gaussian basis functions and application to atomically thin transition-metal dichalcogenides
• Symmetry-protected topological polarons