222 citations · 447 across the 4 of their papers we have counts for
4 papers
Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential
Madisen Holbrook, Yuxuan Chen, Hyunsue Kim +6
The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the tr…
Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Qiang Zhang, Yuxuan Chen, Chendong Zhang +4
Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic st…
Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction
Chendong Zhang, Yuxuan Chen, Jing-Kai Huang +5
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for crea…
Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer
Chendong Zhang, Yuxuan Chen, Amber Johnson +5
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and ph…