Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
arXiv:1206.1758 · doi:10.1103/PhysRevB.85.161403
Abstract
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in-situ Raman scattering from single layer MoS electrochemically top-gated field effect transistor (FET), we show softening and broadening of A phonon with electron doping whereas the other Raman active E mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why A mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single layer MoS-based FETs, which have a high on-off ratio and are of enormous technological significance.
5 pages, 3 figures
References in corpus (18)
- Electric Field Effect in Atomically Thin Carbon Films
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Atomically thin MoS2: A new direct-gap semiconductor
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Gate-induced insulating state in bilayer graphene devices
- Graphene Nano-Ribbon Electronics
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Phonons in single and few-layer MoS2 and WS2
- Born-Oppenheimer Breakdown in Graphene
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Phonon anharmonicities in graphite and graphene
- Phonon Linewidths and Electron Phonon Coupling in Nanotubes
- Phonon renormalisation in doped bilayer graphene
- Observation of Anomalous Phonon Softening in Bilayer Graphene
- Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
- Doped graphene as tunable electron-phonon coupling material
- Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor
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