activity
20112022
most citedSymmetry-dependent phonon renormalization in monolayer MoS2 transistor

1.1k citations · 1.6k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2022★ 51 cited

Gas permeation through graphdiyne-based nanoporous membranes

Zhihua Zhou, Yongtao Tan, Qian Yang +20

Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membra…

cond-mat.supr-con2022★ 15 cited

Pressure-induced superconductivity in weak topological insulator BiSe

Pallavi Malavi, Arpita Paul, Achintya Bera +6

Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topolo…

physics.app-ph2018★ 50 cited

Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites?

Igal Levine, Satyajit Gupta, Achintya Bera +10

Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport p…

cond-mat.mtrl-sci2017★ 66 cited

Enhanced Raman and photoluminescence response in monolayer MoS due to laser healing of defects

Achintya Bera, D V S Muthu, A K Sood

Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS…

cond-mat.mtrl-sci2017★ 25 cited

Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe: Raman and First-principles studies

Achintya Bera, Anjali Singh, D V S Muthu +2

High pressure Raman spectroscopy of bulk 2H-MoTe upto 29 GPa is shown to reveal two phase transitions (at 6 and 16.5 GPa), which are analyzed using first-principl…

cond-mat.mtrl-sci2016★ 24 cited

Pressure-induced phase transition in BiSe at 3 GPa: electronic topological transition or not?

Achintya Bera, Koushik Pal, D V S Muthu +2

In recent years, a low pressure transition around P 3 GPa exhibited by the AB-type 3D topological insulators is attributed to an electronic topological transition (E…

cond-mat.mes-hall2015★ 1 cited

Insights into vibrational and electronic properties of MoS using Raman, photoluminescence and transport studies

Achintya Bera, A. K. Sood

We review vibrational and electronic properties of single and a few layer MoS relevant to understand their resonant and non-resonant Raman scattering results. In particular, th…

cond-mat.mtrl-sci2013★ 122 cited

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

Achintya Bera, Koushik Pal, D. V. S. Muthu +4

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anom…

cond-mat.mtrl-sci2012★ 1.1k cited

Symmetry-dependent phonon renormalization in monolayer MoS2 transistor

Biswanath Chakraborty, Achintya Bera, D. V. S. Muthu +3

Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of R…

cond-mat.supr-con2012★ 13 cited

Superconducting Fluctuations and Anomalous Phonon Renormalization much above superconducting transition temperature in Ca4Al2O5.7Fe2As2

Pradeep Kumar, A. Bera, D. V. S. Muthu +3

Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of 5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K, reveal that the Raman mo…

cond-mat.str-el2012★ 44 cited

Coupled Phonons, Magnetic Excitations and Ferroelectricity in AlFeO3: Raman and First-principles Studies

Pradeep Kumar, A. Bera, D. V. S. Muthu +7

We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and co…

cond-mat.supr-con2011★ 14 cited

Raman Evidence for Superconducting Gap and Spin-Phonon Coupling in Superconductor Ca(Fe0.95Co0.05)2As2

Pradeep Kumar, Achintya Bera, D. V. S. Muthu +8

Inelastic light scattering studies on single crystal of electron-doped Ca(Fe0.95Co0.05)2As2 superconductor, covering the tetragonal to orthorhombic structural transition as well as…

cond-mat.mtrl-sci2011★ 34 cited

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Gopal K. Pradhan, Achintya Bera, Pradeep Kumar +2

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset…