activity
20132017
most citedSharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

122 citations · 214 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci201766 cited

Enhanced Raman and photoluminescence response in monolayer MoS due to laser healing of defects

Achintya Bera, D V S Muthu, A K Sood

Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS

cond-mat.mtrl-sci201725 cited

Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe: Raman and First-principles studies

Achintya Bera, Anjali Singh, D V S Muthu +2

High pressure Raman spectroscopy of bulk 2H-MoTe upto 29 GPa is shown to reveal two phase transitions (at 6 and 16.5 GPa), which are analyzed using first-principl…

cond-mat.mtrl-sci2016

Pressure-induced phase transition in BiSe at 3 GPa: electronic topological transition or not?

Achintya Bera, Koushik Pal, D V S Muthu +2

In recent years, a low pressure transition around P 3 GPa exhibited by the AB-type 3D topological insulators is attributed to an electronic topological transition (E…

cond-mat.mes-hall20151 cited

Insights into vibrational and electronic properties of MoS using Raman, photoluminescence and transport studies

Achintya Bera, A. K. Sood

We review vibrational and electronic properties of single and a few layer MoS relevant to understand their resonant and non-resonant Raman scattering results. In particular, th…

cond-mat.mtrl-sci2013122 cited

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

Achintya Bera, Koushik Pal, D. V. S. Muthu +4

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anom…