activity
20112022
most citedSymmetry-dependent phonon renormalization in monolayer MoS2 transistor

1.1k citations · 1.6k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2022★ 51 cited

Gas permeation through graphdiyne-based nanoporous membranes

Zhihua Zhou, Yongtao Tan, Qian Yang +20

Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membra…

cond-mat.supr-con2022★ 15 cited

Pressure-induced superconductivity in weak topological insulator BiSe

Pallavi Malavi, Arpita Paul, Achintya Bera +6

Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topolo…

physics.app-ph2018★ 50 cited

Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites?

Igal Levine, Satyajit Gupta, Achintya Bera +10

Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport p…

cond-mat.mtrl-sci2017★ 66 cited

Enhanced Raman and photoluminescence response in monolayer MoS due to laser healing of defects

Achintya Bera, D V S Muthu, A K Sood

Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS…

cond-mat.mtrl-sci2017★ 25 cited

Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe: Raman and First-principles studies

Achintya Bera, Anjali Singh, D V S Muthu +2

High pressure Raman spectroscopy of bulk 2H-MoTe upto 29 GPa is shown to reveal two phase transitions (at 6 and 16.5 GPa), which are analyzed using first-principl…

cond-mat.mtrl-sci2016★ 24 cited

Pressure-induced phase transition in BiSe at 3 GPa: electronic topological transition or not?

Achintya Bera, Koushik Pal, D V S Muthu +2

In recent years, a low pressure transition around P 3 GPa exhibited by the AB-type 3D topological insulators is attributed to an electronic topological transition (E…