Insights into vibrational and electronic properties of MoS$_2$ using Raman, photoluminescence and transport studies

Achintya Bera; A. K. Sood

paper

Insights into vibrational and electronic properties of MoS $_{2}$ using Raman, photoluminescence and transport studies

arXiv:1502.03452

Abstract

We review vibrational and electronic properties of single and a few layer MoS $_{2}$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing modes show significant dependence on the number of MoS $_{2}$ layers. Further, the electron doping of the MoS $_{2}$ single layer achieved using top-gating in a field effect transistor renormalizes the two optical modes A $_{1 g}$ and E $_{2 g}^{1}$ differently due to symmetry-dependent electron-phonon coupling. The issues related to carrier mobility, the Schottky barrier at the MoS $_{2}$ -metal contact pads and the modifications of the dielectric environment are addressed. The direct optical transitions for single layer-MoS $_{2}$ involve two excitons at K-point in the Brillouin zone and their stability with temperature and pressure has been reviewed. Finally, the Fermi-level dependence of spectral shift for a quasiparticle, called trion, has been discussed.

arXiv comment76 pages, 49 figures

Insights into vibrational and electronic properties of MoS2​ using Raman, photoluminescence and transport studies

Abstract

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Insights into vibrational and electronic properties of MoS $_{2}$ using Raman, photoluminescence and transport studies