Interference enhancement of Raman signal of graphene

Abstract

Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To explain this Raman intensity anomaly, we show that in addition to the interference due to multiple reflection of the incident laser, the multiple reflection of the Raman signal inside the graphene layer must be also accounted for. Further studies of the role of SiO2 layer in the enhancement Raman signal of graphene are carried out and an enhancement factor of ~30 is achievable, which is very significant for the Raman studies. Finally, we discuss the potential application of this enhancement effect on other ultra-thin films and nanoflakes and a general selection criterion of capping layer and substrate is given.

13 pages, 3 figures to be published in Applied Physics Letters

References in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Making graphene visible
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Rayleigh Imaging of Graphene and Graphene Layers
• Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
• Colors Of Graphite On Silicon Dioxide

Cited by in corpus (27)

• Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Interference effect on Raman spectrum of graphene on SiO_2/Si
• Edge chirality determination of graphene by Raman spectroscopy
• Raman spectra of misoriented bilayer graphene
• Optical transmittance of multilayer graphene
• FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping
• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)
• Phase segregation facilitates exfoliation of franckeite crystals to a single unit cell thickness
• Substrate transfer and ex situ characterization of on-surface synthesized graphene nanoribbons
• Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
• Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition
• Assessing the reliability of the Raman peak counting method for the characterization of SWCNT diameter distributions: a cross-characterization with TEM
• Circular dichroism of magneto-phonon resonance in doped graphene
• AFM and Raman studies of topological insulator materials subject to argon plasma etching
• Making the Dzyaloshinskii-Moriya interaction visible
• Raman spectroscopy of optical phonon and incommensurate charge density wave modes in 2H-TaSe2 exfoliated flakes
• Characterization of Hydrogen Plasma Defined Graphene Edges
• Growth and Characterisation Studies of Eu${}_3$O${}_4$ Thin Films Grown on Si/SiO${}_2$ and Graphene
• Layer-dependent Raman spectroscopy of ultrathin Ta${}_2$Pd${}_3$Te${}_5$
• Introducing Corrections to the Reflectance of Graphene by Light Emission
• Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
• Advantages of optical modulation in terahertz imaging for study of graphene layers
• Thermal Dynamics of Graphene Edges Investigated by Polarized Raman Spectroscopy
• Insights into vibrational and electronic properties of MoS${}_2$ using Raman, photoluminescence and transport studies
• Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)
• Raman spectroscopy and imaging of graphene