Current Status of Graphene Transistors

Abstract

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Graphene FETs are shown to be of interest for analog radio frequency applications. Finally, novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices.

11 pages, 6 figures

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Cited by in corpus (11)

• Energy gap tuning in graphene on hexagonal boron nitride bilayer system
• Quantum Transport in Chemically-modified Two-Dimensional Graphene: From Minimal Conductivity to Anderson Localization
• Magnetoresistance in Disordered Graphene: The Role of Pseudospin and Dimensionality Effects Unraveled
• Transfer-free fabrication of graphene transistors
• Modal analysis of graphene-based structures for large deformations, contact and material nonlinearities
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Tunable Band Structures of Polycrystalline Graphene by External and Mismatch Strains
• Velocity renormalization and Dirac cone multiplication in graphene superlattices with various barrier edge geometries
• Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions
• Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field
• A System for Generating Non-Uniform Random Variates using Graphene Field-Effect Transistors