Effect of edge roughness in graphene nanoribbon transistors

Abstract

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general. Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variation between devices, however, can be large, especially for a short channel length.

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Simulation of Graphene Nanoribbon Field Effect Transistors

Cited by in corpus (23)

• Tailoring the atomic structure of graphene nanoribbons by STM lithography
• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
• Etching and Narrowing of Graphene from the Edges
• Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons
• Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires
• Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
• Graphane Nanoribbons: A Theoretical Study
• Electrostatic confinement of electrons in graphene nano-ribbons
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Current Status of Graphene Transistors
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
• Towards Graphene Nanoribbon-based Electronics
• Spontaneous edge-defect formation and defect-induced conductance suppression in graphene nanoribbons
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
• Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures
• Comparison of Raman spectra and vibrational density of states between graphene nanoribbons with different edges
• Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors
• Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures