Simulation of Graphene Nanoribbon Field Effect Transistors

Abstract

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• A Graphene Field-Effect Device

Cited by in corpus (12)

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• Non-volatile switching in graphene field effect devices
• Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
• Making a field effect transistor on a single graphene nanoribbon by selective doping
• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods
• On the possibility of tunable-gap bilayer graphene FET
• High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor