Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

Abstract

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.

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Cited by in corpus (11)

• Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
• Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
• Spin-orbit coupling in hydrogenated graphene
• Two-Dimensional Semiconducting Boron Monolayers
• Direct observation of ordered configurations of hydrogen adatoms on graphene
• Scaling of the energy gap in pattern-hydrogenated graphene
• 1/f noise in graphene
• A stable path to ferromagnetic hydrogenated graphene growth
• Optical conductivity of hydrogenated graphene from first principles
• Electronic and optical properties in graphane