A stable path to ferromagnetic hydrogenated graphene growth
arXiv:1405.5363 · doi:10.1103/PhysRevB.90.035433
Abstract
In this paper, we propose a practical way to stabilize half-hydrogenated graphene (graphone). We show that the dipole moments induced by an hexagonal-boron nitride (h-BN) substrate on graphene stabilize the hydrogen atoms on one sublattice of the graphene layer and suppress the migration of the absorbed hydrogen atoms. Based upon first principle spin polarized density of states (DOS) calculations, we show that the half hydrogenated graphene (graphone) obtained in different graphene-h-BN heterostructures exhibits a half metallic state. We propose to use this new exotic material for spin valve and other spintronics devices and applications.
arXiv comment8 pages, 8 figures
References in corpus (21)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Boron nitride substrates for high-quality graphene electronics
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Microwave Oscillations of a Nanomagnet Driven by a Spin-Polarized Current
- Graphane: a two-dimensional hydrocarbon
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Magnetism in Graphene Induced by Single-Atom Defects
- Thermal Contraction and Disordering of the Al(110) Surface
- Emergence of magnetism in graphene materials and nanostructures
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Localization of Dirac electrons by Moire patterns in graphene bilayers
- Vacancy induced magnetism in graphene and graphene ribbons
- Energy gap tuning in graphene on hexagonal boron nitride bilayer system
- Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
- Monovalent impurities on graphene: midgap states and migration barriers
- Spin-orbit coupling in hydrogenated graphene
- Ab initio studies of the spin-transfer torque in tunnel junctions
- Interface induced room-temperature ferromagnetism in hydrogenated epitaxial graphene
- Enhanced spin-orbit coupling in hydrogenated and fluorinated graphenes studied from first principles
- Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach
- Stable antiferromagnetic graphone