338 citations · 596 across the 3 of their papers we have counts for
4 papers
On the possibility of tunable-gap bilayer graphene FET
G. Fiori, G. Iannaccone
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via in…
Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
Youngki Yoon, Gianluca Fiori, Seokmin Hong +2
We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of t…
Simulation of Graphene Nanoribbon Field Effect Transistors
G. Fiori, G. Iannaccone
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroed…
A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry
G. Fiori, G. Iannaccone, G. Klimeck
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extension…