Heterojunction Hybrid Devices from Vapor Phase Grown MoS${}_2$

Abstract

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS${}_2$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS${}_2$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS${}_2$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS${}_2$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.

arXiv comment23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458)

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