High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature

Abstract

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this novel material with silicon (Si) technology. Besides the thorough characterization of this new 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically-stacked heterostructures of PtSe2 on Si which act as both photodiodes and photovoltaic cells. Thus this study establishes PtSe2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

References in corpus (3)

• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Raman Characterization of Platinum Diselenide Thin Films
• Heterojunction Hybrid Devices from Vapor Phase Grown MoS${}_2$

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