Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Abstract

Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $\mu$m. Multilayered platinum diselenide (PtSe${}_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe${}_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $\mu$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $\mu$m to 28 $\mu$m indicates the suitability of PtSe${}_2$ for PDs far into the infrared wavelength range. Our PtSe${}_2$ PDs integrated by direct growth outperform PtSe${}_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe${}_2$ an attractive 2D material for optoelectronics and PICs.

arXiv comment23 pages, 4 figures

References in corpus (16)

• Two-Dimensional Material Nanophotonics
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Optical modulators with two-dimensional layered materials
• Solar-energy conversion and light emission in an atomic monolayer p-n diode
• Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
• CMOS-compatible graphene photodetector covering all optical communication bands
• Two dimensional semiconductors with possible high room temperature mobility
• Picosecond photoresponse in van der Waals heterostructures
• Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
• High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
• Waveguide-integrated van der Waals heterostructure photodetector at telecom band with high speed and high responsivity
• Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
• Integrating Graphene into Semiconductor Fabrication Lines
• Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe${}_2$ films
• Band gap engineering of PtSe2
• Going Ballistic: Graphene Hot Electron Transistors

Cited by in corpus (4)

• 2D Materials for Future Heterogeneous Electronics
• Graphene thermal infrared emitters integrated into silicon photonic waveguides
• Metal-Organic Chemical Vapor Deposition of PtSe2
• Piezoresistive PtSe${}_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates