Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
arXiv:1409.6412 · doi:10.1038/nphoton.2015.23
Abstract
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a band gap, however, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of 2D materials, is well-suited for photodetector applications due to its narrow but finite band gap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under a bias with very low dark current and attain intrinsic responsivity up to 135 mA/W and 657 mA/W in 11.5nm and 100 nm thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.
15 pages, 4 figures
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Cited by in corpus (28)
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- Infrared fingerprints of few-layer black phosphorus
- Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
- Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation
- Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
- Franckeite: a naturally occurring van der Waals heterostructure
- Mid-infrared Electro-Optic Modulation in Few-layer Black Phosphorus
- The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials
- Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus
- Electronic and optical properties of bilayer blue phosphorus
- Mid-infrared time-resolved photoconduction in black phosphorus
- Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
- A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
- Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge
- Dimensionality and Anisotropicity Dependence of Radiative Recombination in Nanostructured Phosphorene
- Room temperature infrared photodetectors with hybrid structure based on 2D materials
- Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
- Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature
- Direct Investigation of the Birefringent Optical Properties of Black Phosphorus with Picosecond Interferometry
- Observation of A Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
- Layer Tunable Third-Harmonic Generation in Multilayer Black Phosphorus
- Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
- Interfacial amplification for graphene based position-sensitive-detectors
- Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
- Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors
- Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors
- Electrical Control of Linear Dichroism in Black Phosphorus from the Visible to Mid-Infrared
- Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus