Charge Trap Memory Based on Few-Layered Black Phosphorus

Abstract

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices . Here, for the first time we show non-volatile chargetrap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3 /HfO2 /Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of HfO2. The device shows a high endurance and a stable retention of ?25% charge loss after 10 years, even drastically lower than reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards the flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.

arXiv comment16 pages, 10 figures, 1 table. arXiv admin note: substantial text overlap with arXiv:1407.7432 by other authors; text overlap with arXiv:1505.04859 by other authors without attribution

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Cited by in corpus (7)

• Ultrafast non-volatile flash memory based on van der Waals heterostructures
• Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices
• Programmable black phosphorus image sensor for broadband optoelectronic edge computing
• Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications
• Layer dependent electronic structure changes in transition metal dichalcogenides- The microscopic origin
• Ohmic contact engineering in few-layer black Phosphorus field effect transistors
• Unusually strong lateral interaction in the CO overlayer in phosphorene-based systems