Ohmic contact engineering in few-layer black Phosphorus field effect transistors
arXiv:1905.05649 · doi:10.1088/1361-6528/ab8cf4
Abstract
Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.
arXiv comment30 pages, 4 figures
References in corpus (20)
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- The Renaissance of Black Phosphorus
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- Black phosphorus: narrow gap, wide applications
- Degradation of Black Phosphorus (BP): The Role of Oxygen and Water
- Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
- Access and in situ Growth of Phosphorene-Precursor Black Phosphorus
- Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
- Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well
- Electrical contacts to monolayer black Phosphorus: a first principles investigation
- Charge Trap Memory Based on Few-Layered Black Phosphorus
- van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
- Hybrid 2D Black Phosphorus/Polymer Materials: New Platforms for Device Fabrication
- Phosphorus oxide gate dielectric for black phosphorus field effect transistors
- Dephasing in strongly anisotropic black phosphorus
- Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus