Dephasing in strongly anisotropic black phosphorus

Abstract

Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_{\varphi }$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13}c{m}^{-2}$ inferred from the Hall effect. The temperature dependence of $L_{\varphi }$ was also investigated and above 1~K, it was found to decrease weaker than the $L_{\varphi }\propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium

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• Ohmic contact engineering in few-layer black Phosphorus field effect transistors
• STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum
• Gate-tunable strong-weak localization transition in few-layer black phosphorus
• Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide
• Tunable quantum interference effect on magnetoconductivity in few-layer black phosphorus