High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Abstract

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

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• Two-dimensional Halide Perovskites: Tuning Electronic Activities of Defects
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• Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
• The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
• Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus
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• Electronic and magneto-optical properties of monolayer phosphorene quantum dots
• Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus
• Electronic Structure and the Properties of Phosphorene Systems
• Roadmap for Photonics with 2D Materials
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus
• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
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• Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
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• Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings
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• Optical Properties of Anisotropic Excitons in Phosphorene
• Phosphorus oxide gate dielectric for black phosphorus field effect transistors
• Probing the Electronic States in Black Phosphorus Vertical Heterostructures
• The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
• Ohmic contact engineering in few-layer black Phosphorus field effect transistors
• Electronic structure of few-layer black phosphorus from $\mu$-ARPES
• Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
• Dual gate black phosphorus velocity modulated transistor
• Dephasing in strongly anisotropic black phosphorus
• Weak Localization in Few-Layer Black Phosphorus
• Electron spin dynamics of two-dimensional layered materials
• Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers
• Anisotropic hybrid excitation modes in monolayer and double-layer phosphorene on polar substrates
• Long-Term Environmental Stability of Nitrogen-Healed Black Phosphorus
• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets
• Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization
• Nonequilibrium Magnetic Oscillation with Cylindrical Vector Beams
• Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene
• Effect of long-range structural corrugations on magnetotransport properties of phosphorene in tilted magnetic field
• Observation of A${}_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
• Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
• Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures
• Double carrier transport in electron doped region in black phosphorus FET
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• Enhanced thermoelectric properties in phosphorene nanorings
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• Straightforward Method to Orient Black Phosphorus from Bulk to Thin Layers using a Standard Green Laser