activity
20142017
most citedHigh quality sandwiched black phosphorus heterostructure and its quantum oscillations

513 citations · 1.1k across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2017★ 1 cited

Probing strong interactions in p-type few-layer WSe by density-dependent Landau level crossing

Shuigang Xu, Liheng An, Jiangxiazi Lin +7

Atomically thin transition metal dichalcogenides (TMDCs) such as MoS and WSe are emerging as a new platform for exploring many-body effects. Coulomb interactions are marked…

cond-mat.mes-hall2017★ 52 cited

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

Shuigang Xu, Junying Shen, Gen Long +17

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…

cond-mat.mtrl-sci2016★ 24 cited

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Xiaolong Chen, Lin Wang, Yingying Wu +14

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap stru…

cond-mat.mes-hall2015★ 104 cited

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

Zefei Wu, Shuigang Xu, Huanhuan Lu +10

In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions…

cond-mat.mes-hall2015★ 17 cited

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Yingying Wu, Xiaolong Chen, Zefei Wu +7

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered mate…

cond-mat.mtrl-sci2015★ 115 cited

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Shuigang Xu, Zefei Wu, Huanhuan Lu +14

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method…

cond-mat.mtrl-sci2014★ 513 cited

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Xiaolong Chen, Yingying Wu, Zefei Wu +8

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-…

cond-mat.mtrl-sci2014★ 33 cited

Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy

Zefei Wu, Yu Han, Wei Zhu +12

We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has…

cond-mat.mes-hall2014★ 7 cited

High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

Yang Wang, Xiaolong Chen, Weiguang Ye +6

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by t…

cond-mat.mtrl-sci2014★ 225 cited

Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures

Xiaolong Chen, Zefei Wu, Shuigang Xu +12

The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-elect…