Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures

Abstract

The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena in MoS2, the underlying mechanism and detailed MIT process still remain largely unexplored. Here, we demonstrate that the vertical metal-insulator-semiconductor (MIS) heterostructures built from atomically thin MoS2 (monolayers and multilayers) are ideal capacitor structures for probing the electron states in MoS2. The vertical configuration of MIS heterostructures offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of MoS2 over a wide excitation frequency (100 Hz-1 MHz) and temperature range (2 K- 300 K). By combining capacitance and transport measurements, we have observed a percolation-type MIT, driven by density inhomogeneities of electron states, in the vertical heterostructures built from monolayer and multilayer MoS2. In addition, the valence band of thin MoS2 layers and their intrinsic properties such as thickness-dependence screening abilities and band gap widths can be easily accessed and precisely determined through the vertical heterostructures.

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• Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride
• Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
• Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes
• Metal to insulator quantum-phase transition in few-layered ReS${}_2$
• Electrical control of near-field energy transfer between quantum dots and 2D semiconductors
• Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors
• Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
• Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
• Thermal light emission from monolayer MoS2
• Non Volatile MoS${}_2$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric
• Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
• Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
• Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS${}_2$
• Epsilon-Near-Zero behavior from plasmonic Dirac point: theory and realization using two-dimensional materials
• Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
• Coexisting 1T/2H polymorphs, reentrant resistivity behavior, and charge distribution in MoS2-hBN 2D/2D composite thin films
• Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)
• Control of interlayer delocalization in 2H transition metal dichalcogenides
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• The Role of Mobile Point Defects in Two-Dimensional Memristive Devices
• How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS${}_2$ Transistors?
• Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
• Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
• Probing the Electronic States in Black Phosphorus Vertical Heterostructures
• Coulomb screening and scattering in atomically thin transistors across dimensional crossover
• Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS${}_2$
• Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS${}_2$ Transistor
• Optical absorption in disordered monolayer molybdenum disulfide
• Understanding interface properties in 2D heterostructure FETs
• Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
• Local Spectroscopies Reveal Percolative Metal in Disordered Mott Insulators
• Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
• Quantum-mechanical effect in atomically thin MoS2 FET
• Temperature effect on lattice and electronic structures of WTe${}_2$ from first-principles study
• Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes
• Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors
• Negative compressibility in MoS2 capacitance
• Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
• Theory of cross quantum capacitance
• Quantum electron transport in ohmic edge contacts between two-dimensional materials
• 2D Black Phosphorus Carbide: Rippling and Formation of Nanotubes