513 citations · 3.2k across the 30 of their papers we have counts for
30 papers
Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface
Ciaran Mullan, Sergey Slizovskiy, Jun Yin +12
Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lat…
Interfacial ferroelectricity in marginally twisted 2D semiconductors
Astrid Weston, Eli G Castanon, Vladimir Enaldiev +19
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semico…
Bridging the gap between atomically thin semiconductors and metal leads
Xiangbin Cai, Zefei Wu, Xu Han +15
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…
Out-of-equilibrium criticalities in graphene superlattices
Alexey I. Berdyugin, Na Xin, Haoyang Gao +19
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction.…
In situ twistronics of van der Waals heterostructures
Yaping Yang, Jidong Li, Jun Yin +7
In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by…
Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene
Yanmeng Shi, Shuigang Xu, Mohammed M. Al Ezzi +16
Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mo…
Composite super-moiré lattices in double aligned graphene heterostructures
Zihao Wang, Yi Bo Wang, J. Yin +23
When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic pr…
Control of electron-electron interaction in graphene by proximity screening
M. Kim, S. G. Xu, A. I. Berdyugin +14
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One…
Minibands in twisted bilayer graphene probed by magnetic focusing
A. I. Berdyugin, B. Tsim, P. Kumaravadivel +9
Magnetic fields force ballistic electrons injected from a narrow contact to move along skipping orbits and form caustics. This leads to pronounced resistance peaks at nearby voltag…
Stacking Order in Graphite Films Controlled by Van der Waals Technology
Yaping Yang, Yi-Chao Zou, Colin R. Woods +10
In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layer…
Resonant Terahertz Detection Using Graphene Plasmons
D. A. Bandurin, D. Svintsov, I. Gayduchenko +13
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mi…
Intrinsic valley Hall transport in atomically thin MoS2
Zefei Wu, Benjamin T. Zhou, Gui-Bin Liu +10
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were…
Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS
Jiangxiazi Lin, Tianyi Han, Benjamin A. Piot +10
Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall ef…
Probing strong interactions in p-type few-layer WSe by density-dependent Landau level crossing
Shuigang Xu, Liheng An, Jiangxiazi Lin +7
Atomically thin transition metal dichalcogenides (TMDCs) such as MoS and WSe are emerging as a new platform for exploring many-body effects. Coulomb interactions are marked…
Isolation and Characterization of Few-layer Manganese Thiophosphite
Gen Long, Ting Zhang, Xiangbin Cai +12
This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS that couples the valley degree of freedom to a macroscopic antiferromagnetic order. Th…
Quantum Transport in Ambipolar Few-layer Black Phosphorus
Gen Long, Denis Maryenko, Sergio Pezzini +10
Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation p…
Gate-tunable strong-weak localization transition in few-layer black phosphorus
Gen Long, Shuigang Xu, Xiangbin Cai +8
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge im…
Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
Shuigang Xu, Junying Shen, Gen Long +17
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…
Induced robust topological order on an ordinary insulator hetero-structured with a strong topological insulator
Bin Li, Qiangsheng Lu, Shuigang Xu +5
Topological states of matter originate from distinct topological electronic structures of materials. As for strong topological insulators (STIs), the topological surface (interface…
Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
Gen Long, Shuigang Xu, Junying Shen +8
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induce…
Probing the Electronic States in Black Phosphorus Vertical Heterostructures
Xiaolong Chen, Lin Wang, Yingying Wu +14
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap stru…
Band bending at interfaces between topological insulator Bi2Se3 and transition metals
Weiguang Ye, A. B. Pakhomov, Shuigang Xu +11
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemic…
Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides
Zefei Wu, Shuigang Xu, Huanhuan Lu +10
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions…
Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
Yingying Wu, Xiaolong Chen, Zefei Wu +7
Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered mate…