Quantum Transport in Ambipolar Few-layer Black Phosphorus

Abstract

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility ${\chi }_s=m^{\ast }{g}^{\ast }=1.1\pm 0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

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Cited by in corpus (7)

• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
• Electrostatic quantum dot confinement in phosphorene
• Wigner molecules in phosphorene quantum dots
• Effect of long-range structural corrugations on magnetotransport properties of phosphorene in tilted magnetic field
• PAW mediated ab initio simulations on linear response phonon dynamics of anisotropic black phosphorous monolayer for thermoelectric applications
• Aharonov-Bohm oscillations in phosphorene quantum rings: mass anisotropy compensation by confinement potential