activity
19982023
most citedRoom-Temperature Quantum Hall Effect in Graphene

3.1k citations · 14.6k across the 89 of their papers we have counts for

collaborators

89 papers

cond-mat.mes-hall2023★ 17 cited

Phonon-mediated room-temperature quantum Hall transport in graphene

Daniel Vaquero, Vito Clericò, Michael Schmitz +14

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed…

cond-mat.supr-con2022★ 101 cited

Orbital Fulde-Ferrell-Larkin-Ovchinnikov state in an Ising superconductor

Puhua Wan, Oleksandr Zheliuk, Noah F. Q. Yuan +8

The conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state relies on the Zeeman effect of an external magnetic field to break time-reversal symmetry, forming a state of finite-…

cond-mat.mtrl-sci2022★ 3 cited

Strongly nonlinear antiferromagnetic dynamics in high magnetic fields

Pavel Stremoukhov, Ansar Safin, Casper F. Schippers +7

Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and…

cond-mat.mes-hall2022★ 2 cited

Disentangling electrical switching of antiferromagnetic NiO using high magnetic fields

Casper Floris Schippers, Michał J. Grzybowski, Km Rubi +5

Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by…

cond-mat.mes-hall2021

The magnetic anisotropy of individually addressed spin states

L. C. J. M. Peters, P. C. M. Christianen, H. Engelkamp +6

Controlling magnetic anisotropy is a key requirement for the fundamental understanding of molecular magnetism and is a prerequisite for numerous applications in magnetic storage, s…

cond-mat.mes-hall2021

High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells

Zijin Lei, Erik Cheah, Km Rubi +7

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electro…