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Quantum Hall activation gaps in bilayer graphene
E. V. Kurganova, A. J. M. Giesbers, R. V. Gorbachev +4
We have measured the quantum Hall activation gaps in bilayer graphene at filling factors and in high magnetic fields up to 30 T. We find that energy levels can be…
Generation of energy selective excitations in quantum Hall edge states
C. Leicht, P. Mirovsky, B. Kaestner +7
We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits singl…
From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching
S. Neubeck, L. A. Ponomarenko, F. Freitag +6
Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer ac…
Constructive role of non-adiabaticity for quantized charge pumping
B. Kaestner, C. Leicht, P. Mirovsky +5
We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been…