Quantum Hall activation gaps in bilayer graphene

Abstract

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu =\pm 4$ and $\nu =\pm 8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.

4 pages, accepted version (just removed a few typos), will appear as Fast Track Communication in Solid State Commun

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Cited by in corpus (7)

• Spin splitting in graphene studied by means of tilted magnetic-field experiments
• Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition
• Field induced quantum-Hall ferromagnetism in suspended bilayer graphene
• Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field
• Theory of inter-Landau level magnetoexcitons in bilayer graphene
• Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport
• Temperature-induced phase transitions in the quantum Hall magnet of bilayer graphene