Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport
arXiv:1302.2014 · doi:10.1103/PhysRevB.87.085447
Abstract
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations responsible for the formation of electron-hole puddles. The experimental value meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized.
5 pages, 5 figures, corrected typo in author's name
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- Room-Temperature Quantum Hall Effect in Graphene
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Origin of Spatial Charge Inhomogeneity in Graphene
- The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene
- On the minimal conductivity of graphene
- Transport in chemically doped graphene in the presence of adsorbed molecules
- Microscopic Polarization in Bilayer Graphene
- Quantum-Hall activation gaps in graphene
- Electron-hole puddles in the absence of charged impurities
- Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature
- Coexistence of electron and hole transport in graphene
- Quantum Hall activation gaps in bilayer graphene